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| Datasheet File OCR Text: |
| NTE3029A Infrared-Emitting Diode Description: The NTE3029A 940nm LED is a multi-purpose device designed for use in numerous applications. This Gallium Arsenide device is manufactured to tight tolerances for maximum performance and long lifetime. Features: D Low Cost D Low Degradation D New Mold Technology Improves Performance under Variable Environmental Conditions D New Lens Design offers Improved Optical Performance Applications: D Low Bit Rate Communication Systems D Keyboards D Coin Handlers D Paper Handlers D Touch Screens D Shaft Encoders D General Purpose Interruptive and Reflective Event Sensors Absolute Maximum Ratings: Reverse Breakdown Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Forward Current, IF Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Peak Pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Device Power Dissipation (TA = +25C, Note 2), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mW Derate Above 55C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2mW/C Ambient Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +100C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +100C Lead Temperature (During Soldering, Note 3), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +260C Note 1. The NTE3029A is a discontinued device and has been replaced by NTE3029B. Note 2 Measured with device soldered into a typical printed circuit board. Note 3 Maximum exposure time: 5sec. Minimum of 1/16 inch from the case. A heat sink should be applied in order to prevent the case temperature from exceeding +100C. Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Reverse Leakage Current Forward Voltage Temperature Coefficient of Forward Voltage Capacitance Symbol IR VF VF C V = 0V, f = 1MHz Test Conditions VR = 6V IF = 50mA Min - - - - Typ 0.05 1.3 -1.6 24 Max 100 1.5 - 50 Unit A V mV/C pF Optical Characteristics: (TA = +25C unless otherwise specified) Parameter Peak Emission Wavelength Spectral Half Power Wavelength Spectral Output Temperature Shift Axial Power Output Intensity Intensity Per Unit Solid Angle Power Half-Angle Rise Time and Fall Time PO Ee tr, tf IF = 20mA, Note 4 IF = 20mA, Note 4 Symbol P Test Conditions IF = 50mA Min 930 - - 50 0.2 - - Typ 940 48 0.3 150 0.65 20 1.0 Max 950 - - - - - - Unit nm nm nm/C W/ sq cm mW/Sr s Note 4 Measured using a 11.28 mm diameter detector placed 21 mm away from the device under test. .160 (4.06) .045 (1.14) Dia .125 (3.17) .120 (3.04) .168 (4.27) .750 (19.05) Max .020 (.508) K A .100 (2.54) .060 (1.52) .103 (2.62) |
Price & Availability of NTE3029
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